IMPROVEMENT OF THE STRUCTURE OF THE DEFORMED NANOLAYERS OF AIVBVI SEMICONDUCTORS: ANALYSIS OF A NEW MODEL

Abstract

In this work the analysis of a new model was held, in accordance with that high degree of perfection at maximal deformations in epitaxial nanolayers of IV-VI semiconductors is achieved. Different ways of influence of contrast of elasticity and critical thicknesses on layers were discovered. The contrast in the elasticity between PbSe layer and KC1 substrates, for example, leads to the displacement of the net of discrepancy of dislocations to the substrate and to decrease of the portion of the penetrated dislocations to the layer. The possible liquidation of several critical thicknesses was proposed by blocking of nonhomogenities’ centers. We held the detailed analysis on the relaxation of strains in heterostructures, and two cases are presented: a) when strains are fully removed and b)
on the contrary, with maintenance of deformed state of the layers. High values of the mobility of current carriers and the character of x-ray diffraction line confirm the improvement of the degree of perfection of the nanolayers IV-VI semiconductors and, particularly, of the present model.